Part Number Hot Search : 
NL2016 1216D2 LM301AD TSH340 MC33S 60R110 1660CT 4B0520K
Product Description
Full Text Search

MRF5S21090HSR3 - RF Power Field Effect Transistors

MRF5S21090HSR3_1283597.PDF Datasheet

 
Part No. MRF5S21090HSR3 MRF5S21090HR3 MRF5S21090HR3_06 MRF5S21090HR306
Description RF Power Field Effect Transistors

File Size 396.49K  /  12 Page  

Maker

FREESCALE[Freescale Semiconductor, Inc]



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MRF5S21090H
Maker: N/A
Pack: N/A
Stock: 85
Unit price for :
    50: $29.82
  100: $28.32
1000: $26.83

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ MRF5S21090HSR3 MRF5S21090HR3 MRF5S21090HR3_06 MRF5S21090HR306 Datasheet PDF Downlaod from Datasheet.HK ]
[MRF5S21090HSR3 MRF5S21090HR3 MRF5S21090HR3_06 MRF5S21090HR306 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MRF5S21090HSR3 ]

[ Price & Availability of MRF5S21090HSR3 by FindChips.com ]

 Full text search : RF Power Field Effect Transistors


 Related Part Number
PART Description Maker
PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel enhancement mode field-effect transistor
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
RFK35N10 RFK35N08 POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
List of Unclassifed Manufacturers
ETC[ETC]
IRF530_D ON0283 IRF530-D IRF530/D 100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门))
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola, Inc.
ON Semiconductor
PTF10020 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
ERICSSON POWER MODULES AB
Ericsson Microelectronics
IRFF130 IRFF131 IRFF132 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
General Electric Solid State
GE Solid State
T491D226K025AT T491D476K016AT EMVY630GTR331MMH0S 2 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
Freescale Semiconductor...
MTM40N20 Power Field Effect Transistor
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
MAPL-000817-015CPC RF Power Field Effect Transistor
Tyco Electronics
MRF8S7120NR3 RF Power Field Effect Transistor
Motorola
MTM15N05L MTM15N06L MTP15N05EL MTP15N06L MTP15N05L POWER FIELD EFFECT TRANSISTOR
Motorola, Inc.
MTP6N10 POWER FIELD EFFECT TRANSISTOR
MOTOROLA[Motorola, Inc]
MTP12N10L Power Field Effect Transistor
New Jersey Semi-Conductor P...
 
 Related keyword From Full Text Search System
MRF5S21090HSR3 Emitter MRF5S21090HSR3 ic equivalent MRF5S21090HSR3 Mosfet MRF5S21090HSR3 Noise MRF5S21090HSR3 Data sheet
MRF5S21090HSR3 data MRF5S21090HSR3 mitsubishi MRF5S21090HSR3 Amplifiers MRF5S21090HSR3 Server MRF5S21090HSR3 pci endian mode
 

 

Price & Availability of MRF5S21090HSR3

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.30346989631653